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 HA12231FP
Audio Signal Processor for Car Deck (PB 1 Chip)
REJ03F0135-0200 Previous: ADE-207-327A Rev.2.00 Jun 15, 2005
Description
HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system in one chip.
Functions
* * * * PB equalizer Music sensor Line amp. Line mute x 2 channel x 1 channel x 2 channel x 2 channel
Features
* * * * * * No use external parts for PB equalizer. (Fixed characteristics built-in) Available to change music sensing level by external resistor. Available to change frequency response of music sensor by external capacitor. Different type of PB equalizer characteristics selection (120 s/70 s) is available. Line mute ON/OFF is available. This IC is strong for a cellular phone noise.
Ordering Information
Product HA12231FP Package Code (Previous Code) PRSP0020DD-A (FP-20DA) Functions PBOUT-Level 450 mVrms PB-EQ Music Sensor Mute
Rev.2.00 Jun 15, 2005 page 1 of 22
HA12231FP
Pin Description, Equivalent Circuit
(VCC = 9 V, A system of single supply voltage, Ta = 25C, No Signal, The value in the table shows typical value.)
Pin No. 16 5 Pin Name TAI(L) TAI(R) Note V = VCC/2 Equivalent Circuit Description Tape input
V 100 k VCC/2
14
RIP
V = VCC/2
VCC
Ripple filter
V
GND
13
MS DET
V = VCC
Time constant pin for rectifier
GND
15 6
PBOUT(L) PBOUT(R)
V = VCC/2
VCC
PB output
V
GND
1 17 4
VREF EQOUT(L) EQOUT(R)
V = VCC/2 V = VCC/2
VCC
Reference output
Equalizer output (120 )
V
GND
11 19 18 3 2
VCC FIN(L) RIN(L) RIN(R) FIN(R)

Power supply
Equalizer input
V
Note: MS: Music Sensor
Rev.2.00 Jun 15, 2005 page 2 of 22
HA12231FP
Pin Description, Equivalent Circuit (cont.)
(VCC = 9 V, A system of single supply voltage, Ta = 25C, No Signal, The value in the table shows typical value.)
Pin No. 9 10 8 Pin Name Mute FOR/REV Note Equivalent Circuit Description
Mode control input
120/70
22 k
100 k
GND
12
MS
I
MS VCC
MS output (to MPU) *
200
100 k
D GND
7
MS GV
V = VCC/2
MS gain pin *
V 90 k
20
GND
GND pin
Note: MS: Music Sensor
Rev.2.00 Jun 15, 2005 page 3 of 22
HA12231FP
Block Diagram
EQOUT(L) PBOUT(L) MS DET
RIN(L)
FIN(L)
TAI(L)
DVCC
MS
GND
+
20
19
18
17
16
I.A.
15
14
13
12
11
+
-
LPF
+ MA -
RECT
-
+
I.A.
1
2
3
4
5
6
7
+
8
9
10
VREF
EQOUT(R)
PBOUT(R)
FIN(R)
RIN(R)
MS GV
TAI(R)
120/70
Mute
Absolute Maximum Ratings
(Ta = 25C)
Item Supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC Max Pd Topr Tstg Rating 15 400 -40 to +85 -55 to +125 V mW C C Ta 85C Unit Note
Rev.2.00 Jun 15, 2005 page 4 of 22
S/R
FOR/REV
VCC
RIP
MS
+
(Ta = 25C, VCC = 9 V, PBOUT Level = 450 mVrms (= 0 dB)) Test Condition IC Condition Symbol IQ GVIA Vomax THD CT RL
FIN/RIN FIN FIN FIN/RIN 0 0 0 120s 120s 70s THD = 1%
EQOUT EQOUT EQOUT EQOUT
1k 10k 10k 1k
Specification
Application Terminal Input Output
Remark
HA12231FP
Item Quiescent current Input AMP. gain Signal handling T.H.D. Channel separation
11
PBOUT INPUT OUTPUT fin(Hz) level(dB) Other No signal 1k PBOUT TAI 0 1k PBOUT TAI THD = 1% 1k PBOUT TAI 0 1k PBOUT FIN 12
Min 22.5 12.0 50.0
Typ Max Unit mA 9 6.0 23.5 24.5 dB dB 13.0 % 0.05 0.3 dB 60.0
R 5 5 5 2
L 16 16 16 19
*1
Electrical Characteristics
Rev.2.00 Jun 15, 2005 page 5 of 22
GV EQ 1k GV EQ 10k(1) GV EQ 10k(2) VOM THD-EQ VN
Rg = 680, Din-Audio Filter FIN/RIN EQOUT FIN/RIN EQOUT 0 (0)
1k (1k)
PB-EQ gain
PB-EQ maximum output
0.1 1.2
37.0 33.0 29.0 300
40.0 43.0 36.0 39.0 32.0 35.0 600
L R 15 6 6 15 6 15 6 15 6 15 dB 17 2/3 19/18 4 dB 17 4 19 2 dB 17 4 19 2 mVrms 2/3 19/18 4 17
*1
PB-EQ THD Noise voltage level converted in input VON VOL IOH Mute VIL VIH
TAI No signal
1k
% 0.5 2/3 19/18 2.0 Vrms 2/3 19/18 dB
4 4
17 17

MS sensing level
TAI 12
5k
TAI 0
5k
-18.0 -14.0 -10.0
1.0
1.5
5
V
16
6
15
12
MS output low level
5
16
6
15
12
MS output leak current MUTE attenuation Control voltage
PBOUT MSOUT PBOUT MSOUT MSOUT PBOUT
0.0 2.0 70.0 80.0 -0.2 1.0 3.5 VCC
A dB V
5
16
12 6
12 15
8, 9, 10
Note: 1. VCC = 7.2 V
EQ PB TAI RIN FIN + + C14 22 R14 680 R12 5.1k + SW6 C10 2.2 R8 3.9k +C7 100 + C9 1 R9 330k C8 0.33 C13 22 R15 680 R13 5.1k C12 0.1 + R10 10k DC SOURCE1 SW3 C11 0.47 R11 10k SW8
HA12231FP
Test Circuit
PBL MS PBR
SW13
DC VM
Rev.2.00 Jun 15, 2005 page 6 of 22
20 19 18 17 16 15 14 13 12 11
MS
RIP
VCC
GND
+ - MS I.A.
TAI(L)
FIN(L)
LPF RECT
+ MA - - I.A.
RIN(L) PBOUT(R) EQOUT(R) FOR/REV RIN(R) MS GV TAI(R) 120/70 Mute
MS DET
PBOUT(L)
EQOUT(L)
+
FIN(R)
2
C5 2.2 SW5 C3 0.1 + C4 0.47 + C6 0.01 R7 24k R6 10k
VREF
1 3 4 5 6 7
C1 22 SW4 Rch TAI FIN RIN + + R1 680 C2 22 R3 R2 5.1k 680 R4 5.1k
8
SW9 120
9
70 EXT SW10 OFF
10
ON EXT SW11 FOR
AC VM2
REV EXT DC SOURCE2 DC SOURCE3 R5 10k Lch PB EQ SW7 Rch
Distortion analyzer Oscillo scope
Lch
SW2 ON OFF SW1 AUDIO SG
AC VM1
SW12 Noise meter NOISE METER WITH CCIR/ARM FILTER AND DIN/AUDIO FILTER
Notes: 1. Resistor tolerance 1% 2. Capacitor tolerance 1% 3. Unit R: , C: F
HA12231FP
Functional Description
Power Supply Range HA12231FP is designed to operate on single supply only. Table 1
HA12231FP
Supply Voltage Range
Product 7.2 V to 12.0 V Single Supply
Reference Voltage HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As the peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their usual value. The block diagram is shown as figure 1.
11 VCC
+ -
MS block
20
14 RIP
+
+ -
1 VREF
to Line Amp. : Internal reference voltage
C1 1
Figure 1 The Block Diagram of Reference Supply Voltage Operating Mode Control HA12231FP provides fully electronic switching circuits. And each operating mode control are controlled by parallel data (DC voltage). When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even though as do not destruct it, in series for resistance. Table 2 Threshold Voltage (VTH)
Lo -0.2 to 1.0 Hi 3.5 to VCC Unit V Test Condition
Input Pin Measure
V
Pin No. 8, 9, 10
Table 3
8 9 10
Switching Truth Table
Pin No. Pin Name 120/70 Mute FOR/REV Low 120 (Normal) Mute OFF Forward High 70 (Metal or Chrome) Mute ON Reverse
Notes: 1. Each pins are on pulled down with 100 k internal resistor. Therefore, it will be low-level when each pins are open. 2. Over shoot level and under shoot level of input signal must be the standardized. (High: VCC, Low: -0.2 V) 3. Reducing pop noise is so much better for 10 k to 22 k resisitor and 1 F to 22 F capacitor shown figure 2.
Rev.2.00 Jun 15, 2005 page 7 of 22
HA12231FP
Input Pin
10 to 22 k
+
MPU 1 to 22 F
Figure 2 Interface for Reduction of Pop Noise Input Block Diagram and Level Diagram
PBOUT Level HA12231FP: 450 mVrms (-4.7 dBs)
60mVrms (-22.2dBs) EQOUT
R2 R1 5.1k 5.1k
C1 0.1F
TAI 30mVrms (-28.2dBs)
+ Input Amp. -
0dB PBOUT
EQ Amp.
+-
the other channel
23.5dB
MUTE
FIN
RIN
VREF
PBIN 0.6mVrms (-62.2dBs)
The each level shown above is typical value when offering PBOUT level to PBOUT pin. (EQ Amp. Gv = 40 dB, f = 1 kHz)
Figure 3 Input Block Diagram Adjustment of Playback Reference Operate Level After replace R1 and R2 with a half-fix volume of 10 k, adjust playback reference operate level.
Rev.2.00 Jun 15, 2005 page 8 of 22
HA12231FP The Sensitivity Adjustment of Music Sensor Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensor block diagram is shown in figure 4, and frequency response is shown in figure 5.
S/R VCC
REX2
REX1
+CEX1
CEX2
16
R1 330k
+ C1
0.33F
DVCC
RL
TAI(L)
23.5dB
7 MS Gv
13 MS DET
33.3k -3.5dB
90k
-6dB
- +
RECT
MS 12
GND 20
Micro computer
LPF 25kHz
MS Amp.
66.7k
23.5dB
5
TAI(R)
Figure 4 Music Sensor Block Diagram
f3
Repeat mode (REP)
GV2
f4
GV (dB)
GV1
f1
Search mode (SER)
f2
10
100
1k f (Hz)
10k
25k
100k
Figure 5 Frequency Response
Rev.2.00 Jun 15, 2005 page 9 of 22
HA12231FP 1. Search mode
GV1 = (23.5dB - 3.5dB) + 20log 1 + 90k [dB] REX2 1 f1 = [Hz], f2 = 25k [Hz] 2 CEX2 REX2
2. Repeat mode
GV2 = (23.5dB - 3.5dB) + 20log 1 + 90k [dB] REX1 1 f3 = [Hz], f4 = 25k [Hz] 2 CEX1 REX1
The sensitivity of music sensor (S) is computed by the formula mentioned below.
S = 12.7 - GV [dB]
S is 6 dB down in case of one-side channel. Notes: 1. Search mode: GV1, Repeat mode: G V2 2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms 3. Standard sensing level of music sensor = 130 mVrms
S (one side channel) -14.8 dB -33.0 dB S (both channel) -20.8 dB -39.0 dB
Item Search mode Repeat mode
REX1, 2 24 k 2.4 k
CEX1, 2 0.01 F 1 F
GV1, 2 33.5 dB 51.7 dB
f1, 3 663 Hz 66.3 Hz
f2, 4 25 kHz 25 kHz
Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level, in case of thresh S level constantly.
Music Sensor Time Constant 1. 2. Sensing no signal to signal (Attack) is determined by C1, 0.01 F to 1 F capacitor C1 can be applicable. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 k to 1 M can be applicable.
Music Sensor Output (MS(OUT)) As for the internal circuit of music sensor block, music sensor output pin is connected to the collector of NPN type directly, therefore, output level will be "high" when sensing no signal. And output level will be "low" when sensing signal.
IL =
DVCC - MS(OUT)LO* RL
* MS(OUT)LO : Sensing signal (about 1V)
Note: Supply voltage of MS (OUT) pin must be less than VCC voltage.
Rev.2.00 Jun 15, 2005 page 10 of 22
HA12231FP
Characteristic Curves
EQOUT Noise Output vs. Transmission Frequency 0 EQOUT(L), VCC = 9 V, Vin = 0 dBm, 120 s FIN(L) RIN(L) toward Cellular phone noise
-10
EQOUT Noise Output (dBs)
-20
-30
-40
-50
-60 100
1000 Transmission Frequency (MHz)
10000
EQOUT Noise Output vs. Transmission Signal Input Level 0 -10
EQOUT Noise Output (dBs)
-20 -30 -40 -50 -60 -70 -80 -50
EQOUT(L), VCC = 9 V, 120 s, f = 900 MHz FIN(L) RIN(L) toward Cellular phone noise
-40
-30 -10 0 -20 High Frequency Input Vin (dBm)
10
20
Rev.2.00 Jun 15, 2005 page 11 of 22
HA12231FP
Quiescent Current vs. Supply Voltage 7.0
No signal 70
6.5
Quiescent Current (mA)
6.0
5.5
5.0
4.5
4.0 4
6
8
10 Supply Voltage (V)
12
14
16
Input Amp. Gain vs. Frequency 25
20
Gain (dB)
15
10
5
VCC = 9 V, TAI PBOUT
0 10
100
1k 10k Frequency (Hz)
100k
1M
Rev.2.00 Jun 15, 2005 page 12 of 22
HA12231FP
Total Harmonic Distortion vs. Frequency 1
TAI PBOUT, 0 dB = 450 mVrms, VCC = 9 V, Mute off -10 dB 0 dB 10 dB
0.1
T.H.D. (%)
0.01
30 kHz LPF
400 Hz HPF + 30 kHz LPF
400 Hz HPF + 80 kHz LPF
0.001 10
100
1k Frequency (Hz)
10k
100k
Total Harmonic Distortion vs. Output Level 10
TAI PBOUT, 0 dB = 450 mVrms, VCC = 9 V, Mute off 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
1
T.H.D. (%)
0.1 0.01 -15
-10
-5
5 0 Output Level Vout (dB)
10
15
20
Rev.2.00 Jun 15, 2005 page 13 of 22
HA12231FP
Total Harmonic Distortion vs. Supply Voltage
1
TAI PBOUT = 450 mVrms, Mute off 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
0.1
T.H.D. (%)
0.01 0.001 4
6
8
10 Supply Voltage (V)
12
14
16
Signal Handling 30
TAI PBOUT, 0 dB = 450 mVrms, Mute off, f = 1 kHz, T.H.D. = 1% PBOUT(L) PBOUT(R)
25
20
Vomax (dB)
15
10
5
0 4
6
8
10 Supply Voltage (V)
12
14
16
Rev.2.00 Jun 15, 2005 page 14 of 22
HA12231FP
Equalizer Amp. Gain vs. Frequency
70
60
50
EQ Gain (dB)
40
30
20
FIN EQOUT, VCC = 9 V 120 70
100 1k Frequency (Hz)
10k
10
0 10
100k
Signal to Noise Ratio vs. Supply Voltage 70
FIN EQOUT, Vout = 0 dB = 60 mVrms, DIN-AUDIO filter 120 s 70 s
65
Signal to Noise Ratio (dB)
60
55
50
45
40 4
6
8
10 Supply Voltage (V)
12
14
16
Rev.2.00 Jun 15, 2005 page 15 of 22
HA12231FP
Total Harmonic Distortion vs. Frequency
10
FIN EQOUT, Vout = +20 dB, 0 dB = 60 mVrms 120 s 70 s
1
T.H.D. (%)
0.1
30 kHz LPF
400 Hz HPF + 30 kHz LPF
400 Hz HPF + 80 kHz LPF
0.01 100
1k Frequency (Hz)
10k
100k
Total Harmonic Distortion vs. Output Level (120 s)
100
10
FIN EQOUT, 0 dB = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
1
0.1
0.01 -5
0
5
10 15 20 Output Level Vout (dB)
25
30
35
Rev.2.00 Jun 15, 2005 page 16 of 22
HA12231FP
Total Harmonic Distortion vs. Output Level (70 s)
100
10
FIN EQOUT, 0 dB = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
1
0.1
0.01 -5
0
5
10 15 20 Output Level Vout (dB)
25
30
35
Total Harmonic Distortion vs. Supply Voltage (120 s)
10
FIN EQOUT, Vout = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
1
T.H.D. (%)
0.1 0.01 4
6
8
10 Supply Voltage (V)
12
14
16
Rev.2.00 Jun 15, 2005 page 17 of 22
HA12231FP
Total Harmonic Distortion vs. Supply Voltage (70 s)
10
FIN EQOUT, Vout = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF)
1
T.H.D. (%)
0.1 0.01 4
6
8
10 Supply Voltage (V)
12
14
16
Signal Handling 45
FIN, RIN EQOUT, 120 s, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1% FIN RIN
40
35
Vomax (dB)
30
25
20
15 4
6
8
10 Supply Voltage (V)
12
14
16
Rev.2.00 Jun 15, 2005 page 18 of 22
HA12231FP
Signal Handling 45
FIN, RIN EQOUT, 70 s, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1% FIN RIN
40
35
Vomax (dB)
30
25
20
15 4
6
8
10 Supply Voltage (V)
12
14
16
Crosstalk vs. Frequency (CTRL)
0 -10 -20
FIN PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF LR RL
Crosstalk (dB)
-30 -40 -50 -60 -70 -80 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 19 of 22
HA12231FP
Crosstalk vs. Frequency (CTRL) 0 -10 -20
RIN PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF LR RL
Crosstalk (dB)
-30 -40 -50 -60 -70 -80 10
100
1k Frequency (Hz)
10k
100k
MS Amp. Sensitivity vs. Frequency 10
TAI PBOUT, VCC = 9 V, 0 dB = 450 mVrms SER LH SER HL REP LH REP HL
0
MS Sensing Level (dB)
-10
-20
-30
-40 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 20 of 22
HA12231FP
No-Signal Sensing Time vs. Resistance 1000
TAI PBOUT, VCC = 9 V, f = 5 kHz, MSOUT L H SER 0 dB
No-Signal Sensing Time (ms)
100
10
PBOUT
MSOUT
1 10k
100k Resistance R10 ()
1M
10M
Signal Sensing Time vs. Capacitance
1000
TAI PBOUT, VCC = 9 V, f = 5 kHz, MSOUT H L SER 0 dB
Signal Sensing Time (ms)
100
10
1
PBOUT
MSOUT
0.1 0.001
0.01
0.1 Capacitance C8 (F)
1
10
Rev.2.00 Jun 15, 2005 page 21 of 22
HA12231FP
Package Dimensions
JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-A Previous Code FP-20DA MASS[Typ.] 0.31g
*1
D
F
NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
20
11
bp
b1
HE
c1
E
Index mark
Reference Symbol
*2
c
Dimension in Millimeters Min Nom 12.6 5.5 Max 13
Terminal cross section
D E
1
Z
e
*3
10
bp
A2 A1 0.00 0.10 0.20 2.20 0.34 0.42 0.40 0.17
1
x
M
L1
A bp b1 c c
0.50
0.22 0.20
0.27
A
HE
0 7.50 7.80 1.27
8 8.00
A1
y
L
e x y
0.12 0.15 0.80 0.50
1
Detail F
Z L L 0.70 1.15
0.90
Rev.2.00 Jun 15, 2005 page 22 of 22
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Colophon 2.0


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